Semiconducting SWNTs - S90% - L: 0.3 - 5 μm (NanoIntegris - 1 milligram)
Semiconducting SWNTs - S90% - L: 0.3 - 5 μm (NanoIntegris - 1 milligram)
Semiconducting SWNTs - S90% - L: 0.3 - 5 μm (NanoIntegris - 1 milligram)
Semiconducting SWNTs - S90% - L: 0.3 - 5 μm (NanoIntegris - 1 milligram)
Semiconducting SWNTs - S90% - L: 0.3 - 5 μm (NanoIntegris - 1 milligram)

Semiconducting SWNTs - S90% - L: 0.3 - 5 μm (NanoIntegris - 1 milligram)

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Semiconducting SWNTs - S90% - IsoNanotubes-S 

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Quick Details

Place of Origin: Quebec, Canada
Brand Name: NanoIntegris Technologies Inc.
Model Number: NMT-S90
Application: Battery, composites, coating, supercapacitor, conductive ink, sensors, energy storage, etc.
Chemical Composition: Single-Walled Carbon Nanotubes (90% semiconducting)
Appearance: Light Crimson/Pink
Shelf Life: 6 months

Quantity: 1 milligram

Diameter Range 1.2nm-1.7nm
Length Range 300 nm to 5 microns
Solution Color Light Crimson/Pink
Metal Catlyst Impurity <1.2%
Amorphous Carbon Impurity 1-5%
Nanotube Concentration 0.01 mg/ml
Surfactant Concentration 1% w/v
Surfactant Type  Ionic (proprietary mixture)
Nanotube Type Arc discharge

Metal Catalyst (resulted from NAA)

wt. %

Nickel

0.07

Yttrium

0.38

Iron

0.72

Total

1.17

Iodin

5.29

Material Safety Data Sheet

Applications/Publications

The IsoNanotubes-Semiconducting product has been successfully utilized in numerous scientific works over the years. The primary usage for the IsoNanotubes-S material is for the creation of thin film transistors. Because of the IsoNanotubes-S’ high single-walled nanotube purity, length, pristine surface, and semiconducting properties, this material has proven beneficial in applications such as Gas Detection, Temperature Sensing, CMOS circuit creation, and has laid the ground work for the development of novel and exciting technological advancements.

Temperature Sensing/ Wearable Devices

Mechanically flexible CMOS digital and analog circuits were fabricated on a polyimide substrate by monolithic ingegration of n-type TFTs, p-type CNT-TFTs, and a temperature sensor made of CNTs and PEDOT:PSS, with the CNT source being NanoIntegris’ IsoNanotubes-S 99% solution. [1] The following electrical properties of the CNT-TFTs were found: field-effect mobility of 9.95 ±2.08cm2V-1s-1, on-current (Ion)/off-current (Ioff) ratio (Log Ion/Ioff) of 4.65 ±0.70V and threshold votage of -1.63 ±0.24V.

The flexible CMOS J-K flip flop digital circuit was also found to a memory function demonstrated when 5 or 0 Volts were applied to the J and K inputs. When operated, the power consumption at steady state was ~68.7nW/mm and 6.34 µW/mm with an applied CLK signal. It was also found that the electrical properties remained unchanged (no malfunction or TFT leakage) with a bending radius of 5.6mm and 500 bending cylces.

Additionally, analog circuits were fabricated in the form of a differential amplifier. The circuit produced a peak gain of ~31.7dB, corresponding to a 38.5 times amplification. This amplified was utilized to fabricate a temperature sensor in which the electrical resistance was decreased with increasing temperature. In the temperature range of 28 and 34°C, the rate of voltage change was found to be 0.4V/°C when using the amplifier, with a range that can be tuned by changing the input voltage. Such an approach can used for creating wearable devices for monitoring skin temperature.

[1] Adv. Mater. Technol. 2016, 1, 1600058.

Gas Detection

Members of the Sensor System Research Center at the Korea Institute of Science and Technology have created a highly sensitive gas detector by using platinum nanoparticles decorated with NanoIntegris’ IsoNanotubes-S 99% single-walled carbon nanotubes. [1] These sensors were able to detect numerous gases such as NO2, NO, C6H6, C7H8, C3H6O, CO, and NH3 but proved the most successful in the detection of nitrogen dioxide (NO2) at sensitivities down to 2ppm. It was also greatly promising to find that the sensors showed almost complete recovery (~95%) and facilitated both chemisorption and dissociation of NO2 molecules.

[1] Sensors and Actuators B 238 (2017) 1032-1042.